WTe2 is a promising material towards fabrication of energy-efficient electronic devices due to its inherent two-dimensional topological insulator (2D TI) properties.
Theoretical studies indicate that the transport of charge carriers in a certain configuration of this material takes place along the edges of the sample and is protected against back-scattering, but experimentally it is challenging to isolate it unequivocally, because of the material quality and rapid degradation in ambient conditions.
The WTe2 structures obtained within the project "Topological semimetals towards low-dissipation electronics" (lzp-2021/1-0302) - nanowires, single or multi-layer films, thin structures and particularly heterostructures with hexagonal boron nitride are of improved quality due to pristine WTe2/hBN interfaces and are currently being integrated in devices for further research to controllably access and isolate transport via edge states.